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Range Distributions of Boron In Silicon

Published online by Cambridge University Press:  25 February 2011

Mikko Hautala
Mikko Hautala*
Affiliation:
Department of Physics, University of Helsinki, Siltavuorenpenger 2° C, SF−00170 Helsinki, Finland
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Abstract

Depth profiles of 1-2000 keV boron in amorphous and crystalline silicon have been calculated using the computer simulation code COSIPO. Clear inconsistencies have been found in the experimentally measured range parameters. The optimum selection in channeling reduction is found to be a 9° tilt from the ˂001˃-axis combined with a 7° rotation from the ˂100˃- axis. A smaller offset angle yields noticeable channeling at low energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 109
Copyright
Copyright © Materials Research Society 1985

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References

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