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Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs
Published online by Cambridge University Press: 22 February 2011
Abstract
The lattice reconstruction produced by a pulsed laser irradiation in heavily damaged GaAs layers is studied. Spatially resolved Raman measurements are used to characterize the crystalline quality after the annealing cycle produced by a O-switched Ruby laser or by a picosecond pulsed Nd-YAG laser. The continuous evolution in the Raman spectra is usèd to follow the crystal recovery as a function of the irradiation parameters.
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- Copyright © Materials Research Society 1984
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