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Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 March 2011

D. Papadimitriou ,
A.J. Ptak ,
D. Korakakis ,
N.C. Giles  and
T.H. Myers
D. Papadimitriou
Affiliation:
Department of Applied Mathematics and Physical Science, National Technical University of Athens, Athens, Greece
A.J. Ptak
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
D. Korakakis
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
N.C. Giles
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
T.H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
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Abstract

High quality Ga-polarity GaN films were grown by plasma-assisted molecular beam epitaxy to study strain effects due to oxygen incorporation. Oxygen concentrations up to 2 × 1022 cm-3 were studied. Layers containing oxygen at levels above 1022 cm-3 exhibit severe cracking while oxygen concentrations less than 1021 cm-3 apparently does not introduce significant strain. Raman spectra of O2-doped films were evaluated with respect to spectra of unintentionally doped GaN films (n=4x1014 cm-3) grown under the same conditions except for the O2-flux. Analysis of the E2 (high frequency phonon mode near 570 cm-1) Raman band indicated the heaviest doped samples exhibit compressive strain. Frequency-shifts between 0.7 and 0.9 cm-1 were observed as a function of the distance from the crack edges in the heavily doped samples, implying a strain (da/a) of the order of 5x10-4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I2.11.1
Copyright
Copyright © Materials Research Society 2002

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References

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