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Raman Spectroscopy of Size Selected, Matrix Isolated Si Clusters

Published online by Cambridge University Press:  21 February 2011

A. Ogura ,
E. C. Honea ,
C. A. Murray ,
K. Raghavachari ,
W. O. Sprenger ,
M. F. Jarrold  and
W. L. Brown
A. Ogura
Affiliation:
Resident Visitor from NEC Microelectronics Res. Labs., Tsukuba, Japan
E. C. Honea
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. A. Murray
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. Raghavachari
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
W. O. Sprenger
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. F. Jarrold
Affiliation:
Department of Chemistry, Northwestern University, Evanton, IL 60208
W. L. Brown
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We report results of Raman spectroscopy of size selected, matrix isolated Si clusters. Cluster ions produced by laser vaporization are size selected by a quadruple mass spectrometer and co-deposited with cryogenic matrices onto a substrate at ∼15K. A surface-plasmon-polariton-enhanced Raman geometry is used to gain adequate signal.

The observed vibrational frequencies from Si4, Si6 and Si7 are compared with theoretically calculated Raman active modes based on the structures of planar rhombus, distorted octahedron and pentagonal bipyramid, respectively. The agreement is excellent. Cluster agglomeration is observed when cluster concentrations exceed ∼0.3% by volume in the matrix and/or with annealing at ∼28K, below the temperature of matrix evaporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 333
Copyright
Copyright © Materials Research Society 1994

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References

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