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Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size and Temperature

Published online by Cambridge University Press:  01 February 2011

Alfredo Torres ,
Oscar Martínez ,
Carmelo Prieto ,
Juan Jimenez ,
Andrés Rodríguez ,
Jesús Sangrador  and
Tomás Rodríguez
Alfredo Torres
Affiliation:
[email protected], Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Oscar Martínez
Affiliation:
[email protected], Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Carmelo Prieto
Affiliation:
[email protected], Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Juan Jimenez
Affiliation:
[email protected], United States
Andrés Rodríguez
Affiliation:
[email protected], Universidad Politécnica de Madrid, Tecnología Electrónica, Madrid, Spain
Jesús Sangrador
Affiliation:
[email protected], Universidad Politécnica de Madrid, Tecnología Electrónica, Madrid, Spain
Tomás Rodríguez
Affiliation:
[email protected], Universidad Politécnica de Madrid, Tecnología Electrónica, Madrid, Spain
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Abstract

Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

Keywords

Raman spectroscopynanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1145: Symposium MM – Application of Group IV Semiconductor Nanostructures , 2008 , 1145-MM04-12
Copyright
Copyright © Materials Research Society 2009

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References

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