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Raman Spectroscopy of Epitaxial Si/Si1-xGe, xHeterostructures

Published online by Cambridge University Press:  10 February 2011

Ran Liu ,
Stefan Zollner ,
Ming Liaw ,
David O'meara  and
Nigel Cave
Ran Liu
Affiliation:
Arizona Technology Laboratories, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ
Stefan Zollner
Affiliation:
Arizona Technology Laboratories, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ
Ming Liaw
Affiliation:
Materials Research and Strategic Technologies, Motorola, Inc., 2100 E. Elliot Rd., Tempe, AZ
David O'meara
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Inc., Austin, TX 78721
Nigel Cave
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Inc., Austin, TX 78721
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Abstract

Raman scattering studies were carried out on epi Si/Si1-xGex (x = 0.1 to 0.3) heterostructures consisting of a thin Si cap layer (100 - 400 A˚), a grade-down Si1-xGex layer, a constant Si1-xGex, buffer layer and a grade-up graded Si1-xGex layer on (100) oriented Si substrates. Different Ge composition, Si1-xGex layer thicknesses and thermal treatment were used to achieve different relaxation in the Si1-xGex layers. It has been revealed that, to a very good approximation, the absolute strains in the cap Si and constant Si1-xGex layers follow a simple sum-rule that is imposed by the lattice mismatch between unstrained Si and completely relaxed Si1-x Gex. This sum rule can be used to determine the Ge composition and stresses in both cap Si and constant Si1-xGex layers. Excellent agreement was found between the theoretical curve obtained with LO phonon strain coefficient b=−930cm−1 and the experimental total strain for all samples, regardless of the degree of the relaxation of the grade-up Si1-xGex layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 63
Copyright
Copyright © Materials Research Society 1998

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References

1. Dismukes, J. P., Ekstrom, L., and Paff, R. J., J. Phys. Chem. 10, 3021 (1964).Google Scholar
2. Halliwell, M. A. G., Lyons, M. H., Davey, S. T., Hockly, M., Tuppen, C. G., and Gibbings, C. J., Semicon. Sci. Technol. 4, 10 (1989).Google Scholar
3. Anastassakis, E., Cantarero, A., and Cardona, M., Phys. Rev. B 41, 7529 (1990).Google Scholar
4. Anastassakis, E., Pinczuk, A., Burstein, E., Pollack, F. H., and Cardona, M., Solid State Commun. 8, 133 (1970).Google Scholar
5. Lockwood, D. J. and Baribeau, J. -M., Phys. Rev. B 45, 8565 (1992).Google Scholar