Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:51:55.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman Spectroscopy of a.SiGe:H Alloys

Published online by Cambridge University Press:  25 February 2011

L. Yang ,
J. Newton  and
B. Fieselmann
L. Yang
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
J. Newton
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
B. Fieselmann
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
Get access

Abstract

Raman spectroscopy is used to characterize the microscopic bonding structure of a-SiGe:H alloys. Excess Ge-Ge bonding over what is predicted for random alloys is observed. Correlation between the degree of Ge-Ge clustering and the transport properties of the alloys is demonstrated. Implications of the experimental findings regarding improvement in the quality of the alloy material are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 497
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Catalano, A., Newton, J., Arya, R., and Wiedeman, S., Technical Digest of the Int. PVSEC-3, Tokyo, Japan, (1987) p. 61.Google Scholar
2. Wagner, S., et al., in Amorphous Silicon Tech., (Mater. Res. Soc. Proc. 118, Pittsburg, 1988) p. 623.Google Scholar
3. Mackenzie, K.D., et al., Phys. Rev. 31, (1985) p. 2198.Google Scholar
4. Fortmann, C. in Amorphous Silicon Tech., (Mater. Res. Soc. Proc. 118, Pittsburg, 1988) p. 623.Google Scholar
5. Lannin, J.S., in Semiconductors and Semimetals, edited by Pankove, J., 21B, (Academic Press, New York, 1984) p. 159.Google Scholar
6. Lannin, J.S., in Amorphous and Liquid semiconductors, edited by Stuke, J. and Brenig, W. (Taylor and Francis, London, 1974) p. 1245.Google Scholar
7. Yndurain, F., Phys. Rev. Lett. 37, (1976) p. 1062.Google Scholar
8. Bouchard, A.M. et al., to be published.Google Scholar
9. Fortmann, C. et al., private communication.Google Scholar
10. Persans, P.D., in Semiconductor-Based Heterostructures: Interfacial Structure and Stability, edited by Green, M., (Mater. Res. Soc., Pittsburg, 1987).Google Scholar