Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-17T15:08:28.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman Spectroscopy: A Unique Tool for the Study of Thin Films

Published online by Cambridge University Press:  14 March 2011

Ingrid De Wolf
Ingrid De Wolf*
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
Get access

Abstract

In this paper, the different applications of Raman spectroscopy for the study of thin films is briefly discussed, using examples from microelectronics. Special attention is given to the application of micro-Raman spectroscopy for the measurement of local stress in and near films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 615: Symposium G – Polycrystalline Metal & Magnetic Thin Films - 2000 , 2000 , G8.1.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wolf, I. De, Semiconductors, Analytical Applications of Raman Spectroscopy, ed. Pelletier, J. (Blackwell Science 1999) pp. 435–469.Google Scholar
2. Delhaye, M. and Silva, E. Da. Publication of ISA (Dilor-Jobin Yvon-Spex) instruments.Google Scholar
3. Maex, K.. Physics world, 8 (11), pp. 35–39 (1995).10.1088/2058-7058/8/11/27Google Scholar
4. Vuppuladhadium, R., Jackson, H.E., Boyd, J.T.. J. Appl. Phys., 73(11), pp. 7887–7893 (1993).10.1063/1.353940Google Scholar
5. Wolf, I. De, Howard, D.J., Rasras, M., Lauwers, A., Maex, K., Groeseneken, G. and Maes, H.E.. Microelectron. Reliab., 37, No 10/11, pp. 1591–1594 (1997).10.1016/S0026-2714(97)00117-0Google Scholar
6. Doland, C.M. and Nemanich, R.J., J. Mater. Res., 5 (12), pp. 2854–2864 (1990).10.1557/JMR.1990.2854Google Scholar
7. Tsang, J.C., Yokota, Y., Matz, R. and Rubloff, G., Appl. Phys. Lett. 44 (4), pp. 430–432 (1984).10.1063/1.94755Google Scholar
8. Weaver, L., Simard-Normandin, M., Naem, A. and Clark, A.. Mat. Res. Soc. Symp. Proc. 260, pp. 287–291 (1992).10.1557/PROC-260-287Google Scholar
9. Nemanich, R. J., Fiordalice, R.W. and Jeon, H.. IEEE Journal of Quantum Electronics. 25(5), pp. 997–1002 (1989).10.1109/3.27991Google Scholar
10. Jeon, H., Sukow, C.A., Honeycutt, J.W., Rozgonyi, G.A. and Nemanich, R.J.. J. Appl. Phys. 71(9), pp. 4269–4276 (1992).10.1063/1.350808Google Scholar
11. Wolf, I. De, Howard, D.J., Lauwers, A., Maex, K. and Maes, H.E.. Appl. Phys. Lett. 70(17), pp. 2262–2264 (1997).10.1063/1.118833Google Scholar
12. Wolf, I. De, Topical Review, Semicon. Science & Technol. 11 (2), pp. 139–154 (1996).10.1088/0268-1242/11/2/001Google Scholar
13. Wolf, I. De, Maes, H.E. and Jones, S.K., J. Appl. Phys. 79(9), pp. 7148–7156 (1996); I. De Wolf, E. Anastassakis. Addendum, J. Appl. Phys. 85(10), 7484-7485 (1999).10.1063/1.361485Google Scholar
14. Wolf, I. De, Ignat, M., Pozza, G., Maniguet, L. and Maes, H.E.. Analysis of local mechanical stress in and near tungsten lines on silicon substrate. J. Appl. Phys. 85(9), pp. 6477–6485 (1999).10.1063/1.370151Google Scholar
15. Raman and Luminscence Spectroscopy for Microelectronics. Catalogue of optical and physical parameters. “Nostradamus” projects SMT4-CT-95-2024. (European Commission, EUR 18595)). Ed. Wolf, I. De, Jiménez, J., Landesman, J.-P., Frigeri, C., Braun, P., Silva, E. Da and Calvet, E.,. (1998)Google Scholar
16. Maex, K., Wolf, I. De, Howard, D., Steegen, A., Lauwers, A., Abstracts of the 4th International Workshop on Stress Induced Phenomena in Metallization. pp. 72. (1997).Google Scholar
17. Dombrowski, K., Dietrich, B., Wolf, I. De, Rooyackers, R. and Badenes, G.. Proc. ESREF (1999).Google Scholar
18. Ignat, M. and Vandenbulk, L.. Personal communications.Google Scholar
19. Steegen, A., Wolf, I. De, Maex, K. and Ignat, M.. Mat. Res. Soc. Proceedings, Spring Meeting, 1998 Google Scholar
20. Steegen, A., Maex, K. and Wolf, I. De. Local mechanical stress induced defects for Ti and Co/Ti silicidation in sub-0.25 μm CMOS technologies. IEEE-VLSI symposium, pp. 200-201 (1998).10.1063/1.371359Google Scholar
21. Steegen, A., Wolf, I. De and Maex, K.. J. Appl. Phys. 86 (8), pp. 4290–4297 (1999).10.1063/1.371359Google Scholar
22. Michler, J., Kaenel, Y. von, Siegler, J. and Blank, E.. J. Appl. Phys. 83 (1), pp. 187–197 (1998).10.1063/1.366672Google Scholar
23. Ager, J. W. III, Veirs, D. K., Rosenblatt, G.M.. Phys. Rev. B, 43 (8), pp. 6491–6499 (1991)10.1103/PhysRevB.43.6491Google Scholar