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Raman Spectroscopic Study Of Ion-Implanted And Annealed Silicon.

Published online by Cambridge University Press:  15 February 2011

David. D. Tuschel ,
James P. Lavine  and
Jeffrey B. Russell
David. D. Tuschel
Affiliation:
Imaging Research and Advanced Development Eastman Kodak Company, Rochester, NY 14650–2017
James P. Lavine
Affiliation:
Microelectronics Technology Division Eastman Kodak Company, Rochester, NY 14650–2008
Jeffrey B. Russell
Affiliation:
Microelectronics Technology Division Eastman Kodak Company, Rochester, NY 14650–2008
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Abstract

Raman spectroscopy is used to characterize silicon implanted with arsenic and then annealed. The implant dose ranged from 2 × 1012 to 2 × 1013/cm2. The as-implanted samples show a decreased Raman intensity of the 520 cm−1 optical mode, and increased Raman intensity between 400 and 500 cm−1 with respect to an unimplanted silicon wafer. The higher arsenic doses show an increase in the second-order transverse acoustic-mode (TA) intensity around 300 cm−1 relative to the secondorder transverse optical-mode (TO) intensity near 970 cm−1. Annealing restores the 2TA/2TO relative intensities and sharpens the weak peaks between 600 and 900 cm−1. The Raman spectrum is altered by the lowest dose implant and the annealing steps do not lead to a complete recovery of the pre-implant Raman spectrum. This permits the monitoring of lowdose ion-implant damage recovery with Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 549
Copyright
Copyright © Materials Research Society 1996

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