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Raman scattering study of Si nanoclusters formed in Si through a double Au implantation

Published online by Cambridge University Press:  29 July 2011

Gayatri Sahu  and
D.P. Mahapatra
Gayatri Sahu
Affiliation:
Institute of Physics, Bhubaneswar, India
D.P. Mahapatra*
Affiliation:
Institute of Physics, Bhubaneswar, India
*
*Email: [email protected]
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Abstract

A sequential two step 32 keV Au implantation and 1.5 MeV Au irradiation technique has been used to synthesize Si nanoclusters (NCs) in Si. The low energy amorphising implantation has been carried out over a fluence range of (1 – 100) × 1015 cm−2 while the high energy recrystallizing irradiation fluence was fixed at 1 × 1015 cm−2. Samples were further annealed in air at temperatures between 500° to 950° C for a fixed annealing time of 1 hr and were characterized using Raman scattering at an excitation wavelength of 514.5 nm. Results on as-implanted and irradiated samples indicate formation of strained NCs in the top amorphised layer. Annealing around 500°C has been found to result in strain relief after which the data could be well explained using a phonon confinement model with an extremely narrow size distribution.

Keywords

ion-implantationnanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii06-11
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett., 57, 1046 (1990).10.1063/1.103561Google Scholar
2. Hybertsen, M.S., Phys. Rev. Lett. 72, 1514 (1994).10.1103/PhysRevLett.72.1514Google Scholar
3. Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G. and Delerue, C., Phys. Rev. Lett. 82, 197 (1999).10.1103/PhysRevLett.82.197Google Scholar
4. Puzder, A., Williamson, A. J., Grossman, J. C. and Galli, G., Phys. Rev. Lett. 88, 097401 (2002).10.1103/PhysRevLett.88.097401Google Scholar
5. Sahu, G., Lenka, H., Mahapatra, D. P., Rout, B. and McDaniel, F. D., J. Phys. Cond. Matt. (FTC) 22 072203 (2010).10.1088/0953-8984/22/7/072203Google Scholar
6. Ritcher, H., Wang, Z. P. and Ley, L., Solid State Comm., 39, 625 (1981).Google Scholar
7. Campbell, I. H. and Fauchet, P.M., Solid State Comm., 58, 739 (1986).10.1016/0038-1098(86)90513-2Google Scholar
8. Tubino, R., Piseri, L. and Zerbi, G., J. of Chem. Phys., 56, 1022 (1972).10.1063/1.1677264Google Scholar