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Raman Scattering Study of H2O2-Etched Zn0.1Cd0.9Te Surfaces

Published online by Cambridge University Press:  10 February 2011

Brajesh K. Rai ,
R. S. Katiyar ,
K. -T. Chen ,
H. Chen  and
A. Burger
Brajesh K. Rai
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, P.O. Box 23343, Puerto Rico 00931–3343, USA.
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, P.O. Box 23343, Puerto Rico 00931–3343, USA.
K. -T. Chen
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208, USA.
H. Chen
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208, USA.
A. Burger
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208, USA.
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Abstract

Raman study of as-grown and H2O2-etched surfaces of Zn0.1Cd0.9 Te single crystal has been performed. A distribution of Te precipitates on the surface of as-grown ZCT, which increases after etching, has been encountered. With high irradiation powers, due to the oxidation of the surfaces, new bands of TeO32− are evolved. A downward shift in the peak position, as well as a halfwidth broadening, of all Raman modes has been observed with increasing laser power. The phenomenon, due to the formation of insulating oxide of tellurium in a dispersion of Te precipitates and vice-versa, has been attributed to the quantum confinement of phonons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 287
Copyright
Copyright © Materials Research Society 1997

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References

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