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Raman Scattering Spectroscopy of GeSi/Si Strained Layer Superlattice
Published online by Cambridge University Press: 25 February 2011
Abstract
Raman scattering measurements have been carried out on Si1-xGex/Si SLS. It is found that the Ge–Ge optic phonon frequency shift is proportional to strain in the SiGe film, and the Ge–Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.
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- Copyright © Materials Research Society 1993
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