Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:55:31.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman scattering spectra in C-implanted GaN epilayers

Published online by Cambridge University Press:  21 March 2011

W. H. Sun ,
S. J. Chua ,
J. Zhang ,
L. S. Wang ,
M. S. Hao ,
K. M. Chen  and
G.G. Qin
W. H. Sun
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
J. Zhang
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
L. S. Wang
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
M. S. Hao
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
K. M. Chen
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
G.G. Qin
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
Get access

Abstract

We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted GaN, new Raman bands at 293, 376, 669, 1027, 1094 and 1053 cm−1 appeared. From phonon-dispersion curves for hexagonal GaN, the 293 cm−1 and 669 cm−1 bands were tentatively assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively; the 1027 and 1094 cm−1 peaks might be caused by two-phonon scattering involving the 376 and 669 cm−1 phonons, and the 376 cm−1and A1(LO) phonons respectively. (b) Two sharp bands at ∼1350 and ∼1600 cm−1 were observed in the Raman spectra of carbon- implanted GaN after post-implantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. We assigned them, respectively, to the D and G bands of small graphite crystallites arising from C implantation and post-implantation annealing. The observation of these two bands indicates the formation of small graphite crystallites in C-implanted GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.8
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S. and Fasol, G., The Blue Laser Diode-Gallium-Nitride Based Light Emitter and Laser (Springer, New York, 1997).Google Scholar
2. Pankove, J. I. and Hutchby, J. A., J. Appl. Phys. 47, 5387 (1976).Google Scholar
3. Pankove, J. I. and Hutchby, J. A., Appl. Phys. Lett. 24, 281 (1974).Google Scholar
4. Eiting, C. J., Grudoski, P. A., Dupuis, R. D., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E., and Feng, M., Appl. Phys. Lett. 73, 3875 (1998).Google Scholar
5. Zolper, J. C., J. Cryst. Growth 178, 157 (1997).Google Scholar
6. Zolper, J. C., Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Crawford, M. H., and Karlicek, R. F. Jr, Appl. Phys. Lett. 70, 2729 (1997).Google Scholar
7. Seager, C. H., Myers, S. M., Petersen, G. A., Han, J., and Headley, T., J. Appl. Phys. 85, 2568 (1999).Google Scholar
8. Duan, J. Q., Zhang, B. R., and Zhang, Y. X., Wang, L. P., and Qin, G. G., Zhang, G. Y., Tong, Y. Z., Jin, S. X., Yang, Z. J., Zhang, X., and Xu, Z. H., J. Appl. Phys. 82, 5745 (1997).Google Scholar
9. Siegle, H., Kaczmarczyk, G., Filippidis, L., Litvinchuk, A. P., Hoffmann, A., and Thomsen, C., Phys. Rev. B55, 7000 (1997).i Google Scholar
10. Behr, D., Niebuhr, R., Wagner, J., Bachem, K. -H, and Kaufman, U., Appl. Phys. Lett. 70, 363 (1997).Google Scholar
11. Transley, T. A. and Foley, C. P., Electron. Lett. 20, 1066 (1984).Google Scholar
12. Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980).Google Scholar
13. Niebuhr, R., Bachem, K., Dombrowski, K., Maier, M., Pletschen, W., and Kaufman, U., J. Electron. Mater. 24, 1531 (1995).Google Scholar
14. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys. 86, 1 (1999).Google Scholar
15. Tuinstra, F. and Koenig, J. L., J. Chem. Phys. 53, 1126 (1970).Google Scholar
16. Vidano, R. and Fischbach, D.B., J. Am. Ceram. Soc. 61, 13 (1978).Google Scholar
17. Moll, A. J., Haller, E. E., Ager, J. W. III, and Walukiewicz, W., Appl. Phys. Lett. 65, 1145 (1994).Google Scholar
18. Robertson, J., Prog. Solid State Chem. 21, 199 (1991).Google Scholar