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Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

D. Wang ,
C.-C. Tin ,
J. R. Williams ,
M. Park ,
Y. S. Park ,
C. M. Park ,
T. W. Kang  and
W.-C. Yang
D. Wang
Affiliation:
[email protected], Auburn University, Laboratory for Nanophotonics and Department of Physics, United States
C.-C. Tin
Affiliation:
[email protected], Auburn University, Laboratory for Nanophotonics and Department of Physics, United States
J. R. Williams
Affiliation:
[email protected], Auburn University, Laboratory for Nanophotonics and Department of Physics, United States
M. Park
Affiliation:
[email protected], Auburn University, Laboratory for Nanophotonics and Department of Physics, United States
Y. S. Park
Affiliation:
[email protected], Dongguk University, Quantum Functional Semiconductor Research Center and Department of Physics, Korea, Republic of
C. M. Park
Affiliation:
[email protected], Dongguk University, Quantum Functional Semiconductor Research Center and Department of Physics, Korea, Republic of
T. W. Kang
Affiliation:
[email protected], Dongguk University, Quantum Functional Semiconductor Research Center and Department of Physics, Korea, Republic of
W.-C. Yang
Affiliation:
[email protected], Dongguk University, Quantum Functional Semiconductor Research Center and Department of Physics, Korea, Republic of
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Abstract

Raman scattering experiment was carried out to study material and electronic properties of the aligned GaN nanorods grown by plasma-assisted molecular beam epitaxy. Due to the small size of the nanorods and the relatively high power density of the laser illumination used in this investigation, local heating of the sample cannot be neglected. Special care has been taken to identify the frequency shift in the optical phonon peaks induced by local heating prior to any spectral analysis. The residual stress in the GaN nanorods was estimated by analyzing the frequency shift of its E2 Raman mode. It was found that the frequency of E2 mode is shifted by only 0.1 cm-1 comparing with the stress-free frequency, indicating a negligible residual stress in nanorods. Owing to aligned geometry of the nanorods and the back-scattering scattering geometry used in the experiment, A1(LO) Raman mode was collected. The free carrier concentration as well as electron mobility of the GaN nanorods were obtained by the line shape analysis of the coupled A1(LO) phonon-plasmon mode. The electron concentration and mobility of electron obtained from line shape analysis are 3.3×1017 cm-3 and 140 cm2/Vs, respectively. We presented a general method of better determining the electronic parameters of the GaN nanostructures via Raman scattering.

Keywords

nanostructureIII-Voptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-03
Copyright
Copyright © Materials Research Society 2006

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