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Raman Scattering in Ultra Heavily Doped Si and Ge: The Dependence on Free Carrier and Substitutional Dopant Densities

Published online by Cambridge University Press:  22 February 2011

A. Compaan ,
G. Contreras ,
M. Cardona  and
A. Axmann
A. Compaan*
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
G. Contreras*
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
M. Cardona
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
A. Axmann
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik Eckerstrasse 4, 7800 Freiburg Federal Republic of Germany
*
+ A. von Humboldt fellow, permanent address Kansas State University, Manhattan, Kansas, USA
++ DAAD Fellow, on leave from E.S.F.M.-I.P.M. Edif. 6, U.P.A.L.M., Deleg. G.A. Madero, 07300 Mexico, D.F.
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Abstract

We present the results of a systematic study of phonon softening due to free electrons and holes in extremely heavily doped Si and Ge. Metastable concentrations of Bi, Sb, As, P, Al and B were implanted and pulsed laser annealed (ruby or XeCl) to produce substitutional concentrations up to 4×1021 cm−3 . We find softening of the zone center optic phonon of as much as ˜5% in p-type Ge, ˜5.4% in p-type Si, and 2% in n-type Si. The shifts are explained by phonon coupling to single particle electronic excitations. In addition we discuss the density dependence of the Raman-active vibrational local modes of P and Al in Ge and of B in Si which we demonstrate can provide a convenient measure of substitutional concentrations of these low mass dopants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 117
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.White, C. W., Appleton, B. R., Stritzker, B., Zehner, D. M. and Wilson, S. R., in Laser and Electron-Beam Solid Interactions and Materials Processing, ed. by Gibbons, , Hess, , and Sigmon, (North Holland, New York, 1981) p. 59.Google Scholar
2. Preliminary results were reported in Proc. of the Materials Research Society - Europe Symposium (Strasbourg, May 28–30, 1983) Siffert, P., ed., papers by, Compaan, A., Contreras, G., Wagner, J., Cardona, M., and Axmann;, A.Wagner, J.Compaan, A. and Axmann;, A.Vina, L., Compaan, A., Cardona, M., and Axmann;, A.Contreras, G., Compaan, A., and Axmann, A..Google Scholar
3.Wagner, J., Contreras, G., Compaan, A., Cardona, M. and Axmann, A., paper these proceedings.Google Scholar
4.Panlik, M. in Laser and Electron-Beam Interactions with Solids, Appleton, and Celler, , eds. (North Holland, Amsterdam, 1982) p. 579.Google Scholar
5.Engstrom, H. and Bates, J. B., J. Appl. Phys. 50, 2921 (1979).Google Scholar
6.Hill, C., Butler, A. L., and Daly, J. A., Op.Cit. ref. 1, p. 579.Google Scholar
7.Aspnes, D. E. and Studna, A. A., Phys. Rev. B 27, 985 (1983).Google Scholar
8.Young, R. T., Narayan, J., Christie, W. H., van der Leeden, G. A., Rothe, D. E. and Sandstrom, R. L., in Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. by Narayan, J., Brown, W. L. and Lemons, R. A. (North Holland, New York, 1983) p. 401.Google Scholar
9.Fistul, V. I., Heavily Doped Semiconductors (Plenum, New York, 1969).Google Scholar
10.Miyao, M., Motooka, T., Natsuaki, N., and Tokuyama, T., Op.cit. ref. 1, p. 163.Google Scholar
11. See, e.g., Chandrasekhar, M., Chandrasekhar, H. R., Grimsditch, M. and Cardona, M., Phys. Rev. B 22, 4825 (1980) and references therein.Google Scholar
12.Jouanne, M., Thesis, University of Paris (1975, unpublished).Google Scholar
13.Chandrasekhar, M., Renucci, J. B., and Cardona, N., Phys. Rev. B 17, 1623 (1978).Google Scholar
14.Fjeldly, T. A., Cerdeira, F., and Cardona, M., Phys. Rev. B 8, 4723 (1973).Google Scholar
15.Pintschovius, L., Verges, J. A., and Cardona, M., Phys. Rev. B 26, 5658 (1982).Google Scholar
16.Lawaetz, P., The Influence of Holes on the Phonon Spectrum of Semiconductors, Tech. Univ. Denmark (1978, unpublished).Google Scholar
17.Olego, O. and Cardona, M., Phys. Rev. B 23, 6592 (1981).Google Scholar
18.Cosand, A. E. and Spitzer, W. G., Applied-Phys. Lett. 11, 279 (1967).Google Scholar
19.Landoldt-Bornstein Tables, 17a, ed. by Madelung, O., Schulz, M-. and Weiss, M. (Springer Verlag, Berlin, 1982).Google Scholar
20.Renucci, M. A., Renucci, J. B. and Cardona, M., “Light Scattering in Solids”, p. 276, ed. by Balkanski, M. (Flammarion, Paris, 1972).Google Scholar