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Raman Scattering Characterization of Bonding Defects in Silicon

Published online by Cambridge University Press:  15 February 2011

Raphael Tsu
Raphael Tsu*
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan,48084U.S.A.
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Abstract

Raman scattering is used for the characterization of defects in Si. Damage is produced in single crystal silicon by ion-implantation of As and Si. The phonon structure of the damaged layer is that of the typical amorphous Si. After irradiation by pulsed laser(10ns,532nm) at energy density of approximately 0.1J/cm2, a Raman peak appears at a frequency between 508 cm−1 and 517 cm−1 depending on implant dosage. The higher the implant dosage, the lower is the frequency. We explain this in terms of the residual bonding defects caused by the presence of extraneous atoms such as oxygen. On the other hand, irradiation at an energy density in excess of 0.5 J/cm2, a Raman peak appears at a frequency close to that of the single crystal except for small shifts due to Fano-shift. For implant dosage in excess of 4×1016 As/cm2 , we have found additional peaks at 222 cm−1 and 267 cm−1 which are close to the metallic arsenic modes indicating the presence of arsenic clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 445
Copyright
Copyright © Materials Research Society 1981

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References

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