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Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

G. Popovici ,
G. Y. Xu ,
A. Botchkarev ,
W. Kim ,
H. Tang ,
A. Salvador ,
R. Strange ,
J. O. White  and
H. Morkoζ
G. Popovici
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
G. Y. Xu
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
A. Botchkarev
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
W. Kim
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
H. Tang
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
A. Salvador
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
R. Strange
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
J. O. White
Affiliation:
University of Illinois at Urbana-Champaign, Materials Science Laboratory, 104 S. Goodwin Avenue, Urbana, IL 61801
H. Morkoζ
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield, Urbana, IL 61801, e-mail:, [email protected]
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Abstract

Raman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 219
Copyright
Copyright © Materials Research Society 1997

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References

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