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Raman Scattering and Luminescence Study of Rapid Annealing and Laser Irradiation Effects in Ion Implanted InP

Published online by Cambridge University Press:  22 February 2011

D. Kirillov  and
J.L. Merz
D. Kirillov
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
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Abstract

Raman scattering and luminescence spectroscopic techniques were applied to the study of ion implantation of InP and its annealing by a lamp, oven, or laser beam. It was found that both characterization techniques give important information on surface layer transformation during implantation and annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 707
Copyright
Copyright © Materials Research Society 1984

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References

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