Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-04T19:25:19.306Z Has data issue: false hasContentIssue false

Raman Imaging and Thermal Expansion of Highly Textured Pb(Mg1/3Nb2/3)O3-PbTiO3 Piezoelectric Ceramics

Published online by Cambridge University Press:  01 February 2011

Philippe Colomban
Affiliation:
Ladir, UMR 7075 CNRS & Université Pierre & Marie Curie, 2 rue Henry-Dunant, 94320 Thiais, France
Mai Pham-Thi
Affiliation:
Thales Research & Technology France, 91404 Orsay, France
Get access

Abstract

PMN(PZN)-PT single crystals exhibit unique electromechanical properties when oriented and poled along the <001> direction. While expensive crystal growth techniques are advancing slowly, it is of great practical importance to develop an alternative low-cost production method based on strongly oriented or textured ceramics. We present here the thermal expansion, dielectric properties and Raman spectroscopy study of Pb(Mg1/3Nb2/3)O3-PbTiO3 solid solution ((1-x)PMN-xPT, 0.2<x <0.4, here after called PMN xPT) single crystals, random ceramics and ceramics prepared by homo-templated grain growth (HTGG) using cubic PMN-PT single crystal seeds as templates and nanoparticles as ceramic matrix. Representative medium to highly textured ceramics were sintered at 1150°C and 1200°C, respectively, and studied by Raman imaging. Raman peak centre of gravity is used to image the x-composition whereas peak intensity is correlated to the unit-cell distortion and related short-range structure. Smart Raman imaging shows that the final composition is very close to that of the matrix. We compare their thermal expansion (-150 to 300°C) and dielectric properties (R.T. to 300°C) with those of corresponding poled or non-poled single crystals and random ceramics homologues. Short-range ordering and phase diagram are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, E. and Shrout, T., Jpn. J. Appl. Phys. 82 1804 (1982).Google Scholar
2. Sabolsky, E.M., James, A.R., Kwon, S., and Messing, G.L., Appl. Phys. Lett. 78 2551 (2001).Google Scholar
3. Sabolsky, M., Trolier-McKinstry, S. and Messing, G.L., J. Appl. Phys. 93 4072 (2003).Google Scholar
4. Pham Thi, M., Hemery, H., Dammak, H. and Durand, O., Jpn. J. Appl. Phys. (2004) in press.Google Scholar
5. Pham Thi, M., March, G. and Colomban, Ph., J. Eur. Ceram. Soc. (2004) in press.Google Scholar
6. Havel, M., Baron, D. and Colomban, Ph., J. Mater. Sci. (2004) in press.Google Scholar
7. Kreisel, J. and Bouvier, P., J. Raman Spectrosc. 34 524 (2003).Google Scholar
8. Colomban, Ph., Romain, F., Neiman, A. and Animitsa, I., Solid State Ionics 145 339 (2001).Google Scholar
9. Choi, S.W., Strout, T.R., Jang, S.J. and Balla, A.S., Ferroelectrics 100 29 (1989).Google Scholar
10. Noblanc, O., Gaucher, P. and Calvarin, G., J. Appl. Phys. 79 4291 (1996).Google Scholar
11. Noheda, G., Cox, D. E. and Shirane, G., Phys. Rev. B 66 054104–1 (2002).Google Scholar