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Raman Characterization of Polycrystalline Silicon: Stress Profile Measurements

Published online by Cambridge University Press:  15 February 2011

M. S. Benrakkad ,
A. Perez-Rodriguez ,
T. Jahwari ,
J. Samitier ,
J. M. Lopez-Villegas  and
J. R. Morante
M. S. Benrakkad
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Avda. Diagonal 645-647. 08028 Barcelona, Spain.
A. Perez-Rodriguez
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Avda. Diagonal 645-647. 08028 Barcelona, Spain.
T. Jahwari
Affiliation:
Serveis Científico-Tècnics. Universitat de Barcelona, C. Lluis Solé i Sabarís, 1–3. 08028 Barcelona, Spain.
J. Samitier
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Avda. Diagonal 645-647. 08028 Barcelona, Spain.
J. M. Lopez-Villegas
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Avda. Diagonal 645-647. 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Avda. Diagonal 645-647. 08028 Barcelona, Spain.
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Abstract

Raman spectroscopy is applied for the analysis of polysilicon films deposited on SiO2 sacrificial layers. Different deposition technologies and processing parameters have been studied. The features of the first order Si Raman signal (shape, width and position of maximum) are analyzed in order to evaluate the stress average value in the scattering volume. MicroRaman measurements performed at different points on the edge of the samples allows the estimation of the stress gradient through the polysilicon layers. These measurements are correlated with the structure obtained by using micromachined test structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 609
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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