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Raman Characterization of Composition and Strain in Si1−xGex/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

Ran Liu ,
B. Tillack  and
P. Zaumseil
Ran Liu
Affiliation:
Process & Materials Characterization Lab., Motorola, Inc. 2200 W. Broadway Rd., Mesa, AZ 85202
B. Tillack
Affiliation:
Institute for Semiconductor Physics (IHP) Walter-Korsing-Strasse 2, D-15230 Frankfurt (Oder), Germany
P. Zaumseil
Affiliation:
Institute for Semiconductor Physics (IHP) Walter-Korsing-Strasse 2, D-15230 Frankfurt (Oder), Germany
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Abstract

High quality epitaxial Sil−xGex/Si (x = 0.09 to 0.27) samples were studied with polarized Raman scattering technique. The LO (longitudinal optical) -TO (transversal optical) phonon mode splitting due to the tetragonal strain imposed by the lattice mismatch between Sil−xGex and Si was observed for the first time in such structures. In contrast to the case of uniaxial stress, the biaxial stress induces a larger strain frequency shift for the LO mode than for the TO mode. The phonon strain shift coefficient for the LO mode was found to be 1010 cm−1, which is larger than most of the values reported in the literatures, and almost composition independent throughout the range of x≤0.27. We argue that the smaller LO strain shift coefficients indicate that the Sil−xGex films used in previous work were partially relaxed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 277
Copyright
Copyright © Materials Research Society 2000

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References

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