Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-18T06:31:19.034Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman Characterization of Composition and Strain in Si1−xGex/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

Ran Liu ,
B. Tillack  and
P. Zaumseil
Ran Liu
Affiliation:
Process & Materials Characterization Lab., Motorola, Inc. 2200 W. Broadway Rd., Mesa, AZ 85202
B. Tillack
Affiliation:
Institute for Semiconductor Physics (IHP) Walter-Korsing-Strasse 2, D-15230 Frankfurt (Oder), Germany
P. Zaumseil
Affiliation:
Institute for Semiconductor Physics (IHP) Walter-Korsing-Strasse 2, D-15230 Frankfurt (Oder), Germany
Get access

Abstract

High quality epitaxial Sil−xGex/Si (x = 0.09 to 0.27) samples were studied with polarized Raman scattering technique. The LO (longitudinal optical) -TO (transversal optical) phonon mode splitting due to the tetragonal strain imposed by the lattice mismatch between Sil−xGex and Si was observed for the first time in such structures. In contrast to the case of uniaxial stress, the biaxial stress induces a larger strain frequency shift for the LO mode than for the TO mode. The phonon strain shift coefficient for the LO mode was found to be 1010 cm−1, which is larger than most of the values reported in the literatures, and almost composition independent throughout the range of x≤0.27. We argue that the smaller LO strain shift coefficients indicate that the Sil−xGex films used in previous work were partially relaxed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 277
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Halliwell, M. A. G., Lyons, M. H., Davey, S. T., Hockly, M., Tuppen, C. G., and Gibbings, C. J., Semicon. Sci. Technol. 4, 10 (1989).Google Scholar
2.Lockwood, D. J. and Baribeau, J.-M., Phys. Rev. B45, 8565 (1992).Google Scholar
3.Tsang, J.C., Mooney, P.M., Dacol, F.H., and Chu, J.O., J. Appl. Phys. 75, 8088 (1994).Google Scholar
4.Liu, Ran, Zollner, S., Liaw, M., O'Meara, D., and Cave, N., Epitaxy and Applications of Si-Based Heterostructures, MRS Symp. Proc. Vol. 533, pp. 63–68 (1998).Google Scholar
5.Yu, P. and Cardona, M., Fundamentals of Semiconductors, (Springer, Berlin, 1995).Google Scholar
6.Dismukes, J.P., Ekstrom, L., and Paff, R.J., J. Phys. Chem. 10, 3021 (1964).Google Scholar
7. For a review see, Anastassakis, E., Acta Physica Hungarica 74, 83 (1994).Google Scholar
8.Alonso, M.I., Ph.D. thesis, University of Stuttgart, 1989 (unpublished).Google Scholar
9.Madelung, O., Semiconductors - Basic Data, (Springer, Berlin, 1996).Google Scholar
10.Anastassakis, E., Cantarero, A., and Cardona, M., Phys. Rev. B 41, 7529 (1990).Google Scholar