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Raman and Rutherford Backscattering Characterization of Ti-implanted Si above the Mott Limit

Published online by Cambridge University Press:  31 January 2011

Javier Olea Ariza ,
David Pastor ,
Ignacio Mártil ,
Germán González-Díaz ,
Jordi Ibáñez ,
Ramón Cuscó  and
Luis Artús
Javier Olea Ariza
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III, Avda. Complutense s/n, Ciudad Universitaria, Madrid, Madrid, 28040, Spain, +34 913 94 44 34
David Pastor
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III, Madrid, Spain
Ignacio Mártil
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III, Avda. Complutense s/n, Ciudad Universitaria, Madrid, Madrid, 28040, Spain, +34 913 94 44 34
Germán González-Díaz
Affiliation:
[email protected], United States
Jordi Ibáñez
Affiliation:
[email protected], Consejo Superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Barcelona, Spain
Ramón Cuscó
Affiliation:
[email protected], Consejo superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Spain
Luis Artús
Affiliation:
[email protected], Consejo Superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Barcelona, Spain
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Abstract

We have analyzed the degree of crystalline lattice recovery in samples implanted with Ti concentrations well above the Mott limit and subsequently Pulsed-Laser Melting (PLM) annealed by means of Raman spectroscopy and Rutherford Backscattering Spectroscopy (RBS). Since very recently, theoretical studies predicted Ti interstitial sites for the Intermediate Band (IB) formation, the knowledge of the Ti impurity lattice location after PLM annealing is an essential point that can be elucidated by means of RBS measurements. After PLM annealings, Raman and RBS measurements have shown a decrease in the lattice crystalline quality as implanted dose is increased, yielding a significantly improvement of the lattice quality at the highest energy density studied. The RBS channeling spectra show that after PLM annealings Ti impurities are mostly occupying interstitial lattice sites.

Keywords

Raman spectroscopyRutherford backscattering (RBS)laser annealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q04-10
Copyright
Copyright © Materials Research Society 2010

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