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Raman and Optical Properties of the Pulsed Laser Annealing Phase of SI

Published online by Cambridge University Press:  15 February 2011

A. Compaan ,
A. Aydinli ,
M. C. Lee  and
H. W. LO
A. Compaan
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506
A. Aydinli
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506
M. C. Lee
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506
H. W. LO
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506
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Abstract

Raman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 43
Copyright
Copyright © Materials Research Society 1982

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References

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