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Raman and optical absorption studies of silicon carbide structure damage by ion implantation

Published online by Cambridge University Press:  01 February 2011

Claudiu I. Muntele ,
Iulia C. Muntele ,
D. Ila ,
David B. Poker  and
Dale K. Hensley
Claudiu I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
David B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
Dale K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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Abstract

The work reported here deals with studying the defects induced by heavy ion implantation as well as the degree of crystalline lattice recovery after annealing in a high purity argon environment between 600 and 1600 °C. We implanted 6H, n-type silicon carbide with Pd and Au ions at 1015 ions/cm2, and used Micro-Raman (MR) and optical absorption (OA) spectroscopy techniques for investigating the lattice properties and damage evolution at various stages during the fabrication process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.15
Copyright
Copyright © Materials Research Society 2002

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References

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