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Raman and Ft‐Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium‐Nitrogen Alloys

Published online by Cambridge University Press:  10 February 2011

Jun Xu ,
Kunji Chen ,
Duan Feng ,
Seiichi Miyazaki  and
Masataka Hirose
Jun Xu
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093China,
Kunji Chen
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093China,
Duan Feng
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093China,
Seiichi Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi‐Hiroshima 739, Japan
Masataka Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi‐Hiroshima 739, Japan
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Abstract

A series of hydrogenated amorphous germanium‐nitrogen (a‐GeN:H) alloys have been synthesized by plasma enhanced chemical vapor deposition. The structure and its thermal stability have been investigated by means of Raman Scattering and Fourier Transform Infrared techniques. It was found that the structure is changed from Ge‐Ge‐like to Ge‐N‐like when the nitrogen content x in a‐Ge1‐xNx:H is larger than 0.3. Some a‐GeN:H alloys were annealed for 30min at different temperature and it is shown that the film structural stability is significantly improved compared with pure a‐Ge:H film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 419
Copyright
Copyright © Materials Research Society 1997

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References

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