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Radiative Recombination in a-Si:H-FETs

Published online by Cambridge University Press:  26 February 2011

R. Carius
R. Carius*
Affiliation:
Fachbereich Physik, Universität Marburg, Renthof 5, D-355 Marburg, Federal Republic of Germany
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Abstract

We have studied the photoluminescence in the space charge region of field effect transistors (FETs) based on a-Si:H in the temperature range T>100K. The radiative recombination rate rises with increasing gate voltage (Vg >0) The increase is more pronounced at the high energy side of the photoluminescence spectrum and the relative changes increase with temperature. These results are compared to those obtained on doped a-Si:H films, where the defect photoluminescence band increases slightly with increasing doping level but the intrinsic band drops off very rapidly. The different influence of the Fermilevel shift in the doped films is explained by the increasing defect concentration which dominates the photoluminescence results. The results in the FETs are attributed solely to the changes in the occupation of the dangling bond states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 475
Copyright
Copyright © Materials Research Society 1987

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References

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