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Radiation-Induced Oxide Charge Distributions in Simox Buried Oxides

Published online by Cambridge University Press:  28 February 2011

J. M. Hwang ,
J. Bartko ,
P. Rai-Choudhury  and
W. E. Bailey
J. M. Hwang
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235.
J. Bartko
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235.
P. Rai-Choudhury
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235.
W. E. Bailey
Affiliation:
Texas Instruments, P.O. Box 655621, Dallas, TX 75265
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Abstract

In ionizing-radiation environments, oxide charge buildup in the buried oxide of SIMOX SOI material causes an increase in the back-channel leakage current, resulting in an instability in electronic circuits formed on SIMOX wafers. We report the measured distributions of radiation-induced oxide charge density in buried oxides formed by oxygen implantation. These are obtained by etch-back experiments including C-V measurements using a mercury probe and ellipsometer measurements. The results show a region of higher charge density about 1500A from the top interface with a lower density region within a few hundred angstroms of the top interface. The results also show that the oxide charge density decreases with annealing temperature. Some unusual optical properties of SIMOX oxide observed in ellipsometer measurements are discussed comparatively with thermal oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 323
Copyright
Copyright © Materials Research Society 1988

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