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Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Published online by Cambridge University Press:  10 February 2011

T. Hakata ,
H. Ohyama ,
E. Simoen ,
C. Claeys ,
Y. Takami ,
K. Kawamura ,
K. Miyahara  and
M. Hososhima
T. Hakata
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-01Japan
K. Kawamura
Affiliation:
Nippon Steel Co., 3434 Shimada Hikari Yamaguchi, 734Japan
K. Miyahara
Affiliation:
Kumamoto University, 39-1 Kurokami Kumamoto, 860Japan
M. Hososhima
Affiliation:
Japan Electronic Materials Co., 2-5-13, Amagasaki, Hyogo, 660Japan
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Abstract

Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 387
Copyright
Copyright © Materials Research Society 1998

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References

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