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Radiation Response of Thin Oxides Grown By Rapid Thermal Oxidation and Rapid Thermal Annealing Techniques

Published online by Cambridge University Press:  22 February 2011

W. K. Schubert  and
C. H. Seager
W. K. Schubert
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
C. H. Seager
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
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Abstract

High quality, 20 to 30 nm thick SiO2 films were grown using rapid thermal oxidation techniques. Metal-oxide-semiconductor (MOS) capacitors formed with these oxides were characterized electrically using low and high frequency capacitance measurements. The effects of post oxidation annealing (POA) ambient, temperature and duration on the initial oxide properties and the radiation response of the MOS capacitors were determined. The addition of a small amount of O2 to the POA ambient significantly reduced the radiation induced hole trapping and interface state creation, particularly for the higher POA temperatures. In addition, annealing and reirradiation experiments were carried out and showed that both the trapped charge and interface state buildup were completely reversible after anneals at 400°C. This repeatability argues against interface state creation models which involve irreversible changes in the atomic arrangements near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 199
Copyright
Copyright © Materials Research Society 1988

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