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Radiation Induced Subsurface Charging in the Buried Oxide Layer in SIMOX

Published online by Cambridge University Press:  01 February 2011

M. A. Stevens-Kalceff  and
S. Mickle
M. A. Stevens-Kalceff
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia. Electron Microscope Unit, University of New South Wales, Sydney, 2052, NSW, Australia.
S. Mickle
Affiliation:
School of Physics, University of New South Wales, Sydney, 2052, NSW, Australia.
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Abstract

Kelvin Probe Microscopy has been used to characterize the magnitude and spatial distribution of reproducible characteristic residual potential in electron beam irradiated silicon on insulator specimens (SIMOX). Focussed electron beam irradiation produces trapped charge within the insulating buried oxide layer which produces highly localized electric fields. The charging processes are dynamic, localized, and dependent on pre-existing and irradiation induced defect concentrations. The characteristic experimental surface potential distributions are compared with calculated model surface potential distributions. This work demonstrates that proximal probe methods which are usually considered to be surface analysis techniques, can be used to investigate subsurface properties and give insight into subsurface charging processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O6.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Cazaux, J., J. Appl. Phys 59, 1418 (1986)Google Scholar
2. Stevens-Kalceff, M.A, Appl. Phys. Lett. 9, 3050 (2001).Google Scholar
3. Stevens-Kalceff, M.A, Microscopy & Microanalysis 10(6) 797–803 (2004)Google Scholar
4. Bonnell, D.A., Scanning Probe Microscopy and Spectroscopy: Theory, Techniques and Applications. (Wiley-VCH, New York, 2001)Google Scholar
5. Blake, J., Encyclopedia of Physical Science and Technology 14, 805 (2001).Google Scholar
6. http://www.ibis.com Google Scholar
7. Hovington, P., Drouin, D., Gauvin, R., Scanning 19, 1 (1997) http://www.gel.usherb.ca/casino/ Google Scholar
8. Veeco/ Digital Instruments, Santa Barbara, CA, USAGoogle Scholar
9. Stevens-Kalceff, M.A and Mickle, S., In preparation.Google Scholar
10. Egerton, R. F., Li, P., and Malac, M., Micron 35, 399 (2004)Google Scholar
11. Programs HiPhi, MetaMesh, Field Precision, Albuquerque, NM, USA http://www.fieldp.com/ Contact author Google Scholar