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A Quasi-2d Model for Reverse Short Channel Effect

Published online by Cambridge University Press:  10 February 2011

Huilong Zhu
Huilong Zhu*
Affiliation:
TCAD, Digital Equipment Corp., 75 Reed Rd, Hudson, MA 01749, USA
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Abstract

A new physically-based model for reverse short channel effects has been developed. This kinetic model considers three species: neutral interstitial, immobile dopant and mobile interstitial-dopant pairs. To consider ion-implantation damage and stress effects on the Si/SiO2 interface, a non-uniform sink strength at the Si/SiO2 interface for interstitials has been assumed. ALAMODE, a PDE solver, was used to solve the model. Lateral boron distributions of NMOS devices in the channel near the Si/SiO2 interface have been simulated. Significant boron pile-up was found at the gate edges which is in quantitative agreement with the doping profiles extracted from experimental C-V data. The mechanism of the B diffusion in the channel region is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 141
Copyright
Copyright © Materials Research Society 1998

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References

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