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Quantum-well Intermixing using Ge-doped Sol-gel Derived Silica Encapsulant Layer

Published online by Cambridge University Press:  01 February 2011

Hery Susanto Djie ,
Boon-Siew Ooi ,
Charles Kin-Fai Ho ,
Ting Mei ,
Kantisara Pita  and
Quoc-Nam Ngo
Hery Susanto Djie
Affiliation:
[email protected], Lehigh University, Electrical and Computer Engineering, Sinclair Lab.,, 7 Asa Dr., Bethlehem, PA, 18015, United States, 610-7583793, 610-7582605
Boon-Siew Ooi
Affiliation:
[email protected], Lehigh University, Electrical and Computer Engineering, United States
Charles Kin-Fai Ho
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
Ting Mei
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
Kantisara Pita
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
Quoc-Nam Ngo
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
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Abstract

We report the intermixing enhancement using the Ge-doped sol-gel derived silica encapsulant layer in InGaAs/InGaAsP quantum-well laser structure. A bandgap shift of ∼64 nm has been observed from 16% Ge-doped silica capped sample at an annealing temperature of 630°C while the intermixing at the similar temperature can be effectively suppressed with the e-beam evaporated SiO2 encapsulant layer. Using our theoretical model, nearly identical activation energy of 1.7±0.5 eV was obtained from the intermixed sample with Ge-doped silica. Similar intermixing enhancement holds for high Ge-content cap in the intermixed GaAs/AlGaAs quantum-wells related to Ga vacancy injection. We postulate that the dissimilarity in interdiffusion behavior between 0% and 16% Ge-doped silica capped sample is only attributed to the difference in the number of beneficial vacancies that involve in the intermixing process.

Keywords

III-Vsol-gelluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-11
Copyright
Copyright © Materials Research Society 2006

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References

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