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Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices

Published online by Cambridge University Press:  11 February 2011

F. Khalvati
Affiliation:
Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada.
S. Sivoththaman
Affiliation:
Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada.
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Abstract

Amorphous/crystalline silicon (a-Si/c-Si) heterojunctions are of particular importance in photovoltaic (PV) energy conversion in a cost-effective way. This is principally due to the low temperature (low-T) nature of the process. In this work, we have analyzed a (n)a-Si/(i)a-Si/(p)c-Si heterojunction solar cell structure using theoretical models for internal quantum yield (IQY) and I-V behavior. We considered low-quality (low bulk lifetime), cheaper substrates. Thin, low bulk lifetime substrates in combination with a low-T bulk passivation scheme and low rear surface recombination can lead to a cost effective device fabrication process with competitive conversion efficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Taguchi, M., Kawamoto, K., Tsuage, S., Baba, T., Sakata, H., Morizane, M., Uchihashi, K., Nakamura, N., Kiyama, S., and oota, O., Prog. Photovoltaics, 8, 503(2000).Google Scholar
2. Furlan, J., Smole, F., Popovic, P., Topic, M., and Kamin, M., Solar Energy Materials and Solar Cells, 53, 15(1998).Google Scholar
3. Furlan, J., Popovic, P., Smole, F., and Topic, M., Mat. Res. Symp. Proc., 420, 227(1996).Google Scholar
4. Parikh, C. and Lindholm, F., IEEE Trans. Elect. Dev., 39, 1303(1992).Google Scholar
5. Sze, S.M., Physics of Semiconductor Devices, J. Wiley, New York p. 259263(1981).Google Scholar