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Quantum Design of Active Semiconductor Materials for Targeted Wavelengths

Published online by Cambridge University Press:  01 February 2011

Jerome Moloney ,
Joerg Hader  and
Stephan W. Koch
Jerome Moloney
Affiliation:
[email protected], Nonlinear Control Strategies, ., 3542 N Geronimo Ave, Tucson, AZ, 85705, United States, (520)-548-5786, (520)-888-5901
Joerg Hader
Affiliation:
[email protected], Nonlinear Control Strategies, 3542 N Geronimo Ave, Tucson, AZ, 85705, United States
Stephan W. Koch
Affiliation:
[email protected], University of Marburg, Physics Department, Renthof 5, Marburg, 35032, Germany
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Abstract

Performance metrics of every class of semiconductor amplifier or laser system depend critically on semiconductor QW optical properties such as photoluminescence (PL), gain and recombination losses (radiative and nonradiative). Current practice in amplifier or laser design assumes phenomenological parameterized models for these critical optical properties and has to rely on experimental measurement to extract model fit parameters. In this tutorial, I will present an overview of a powerful and sophisticated first-principles quantum design approach that allows one to extract these critical optical properties without relying on prior experimental measurement. It will be shown that an end device L-I characteristic can be predicted with the only input being intrinsic background losses, extracted from cut-back experiments. We will show that textbook and literature models of semiconductor amplifiers and lasers are seriously flawed.

Keywords

optical propertiesepitaxyluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1076: Symposium K – Materials and Devices for Laser Remote Sensing and Optical Communication , 2008 , 1076-K07-04
Copyright
Copyright © Materials Research Society 2008

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