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Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

R. Tsu ,
L. Ioriatti ,
J. F. Harvey ,
H. Shen  and
R. A. Lux
R. Tsu
Affiliation:
Univ. of North Carolina, Charlotte, NC 28223
L. Ioriatti
Affiliation:
Inst. Fisica e Química, USP, Sao Carlos, Brazil
J. F. Harvey
Affiliation:
US Army Res. Lab., Ft. Monmouth, NJ 07703
H. Shen
Affiliation:
US Army Res. Lab., Ft. Monmouth, NJ 07703
R. A. Lux
Affiliation:
US Army Res. Lab., Ft. Monmouth, NJ 07703
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Abstract

The reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 437
Copyright
Copyright © Materials Research Society 1993

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References

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