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QUANTUM CONFINEMENT EFFECTS IN ZnSe/ZnMnSe STRAINED-LAYER SUPERLATTICES

Published online by Cambridge University Press:  28 February 2011

R.B. Bylsma ,
R. Frohne ,
J. Kossut ,
W.M. Becker ,
LA. Kolodziejski  and
R.L. Gunshor
R.B. Bylsma
Affiliation:
Purdue University, West Lafayette, IN 47907.
R. Frohne
Affiliation:
Purdue University, West Lafayette, IN 47907.
J. Kossut
Affiliation:
Purdue University, West Lafayette, IN 47907.
W.M. Becker
Affiliation:
Purdue University, West Lafayette, IN 47907.
LA. Kolodziejski
Affiliation:
Purdue University, West Lafayette, IN 47907.
R.L. Gunshor
Affiliation:
Purdue University, West Lafayette, IN 47907.
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Abstract

Photoluminescence and photoluminescence excitation spectroscopy have been used to identify excited state energy levels in ZnSe/ZnMnSe strained-layer superlattices. Several ZnSe/ZnMnSe superlattices have been grown by MBE with different concentrationsof Mn in the barrier material and consequently with different degrees of lattice mismatch between the ZnSe well and ZnMnSe barrier materials. A strain-induced decrease of the band gap is observed in these structures. Photoluminescence excitation spectra reveal a strain dependent splitting of the heavy and light hole n=1 subbands. The magnitude of this splitting, as well as the observed photoluminescence red-shift, are compatible with expectations based on calculated strains and the deformation potentials of ZnSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 223
Copyright
Copyright © Materials Research Society 1986

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References

1. Osbourne, G.C., J. Vac. Sci. Technol. 131 379 (1983).Google Scholar
2.LA. Kolodziejski, Bonsett, T.C., RIL. Gunshor, Datta, S., RJ3. Bylsma, Becker, W.M., and Otsuka, N., Appl. Phys. Lett. AL, 440 (1984).Google Scholar
3. Bicknell, R.N., Yanka, R., Giles-Taylor, N.C., DJ(. Blanks, EJL. Buckland, and JF. Schetzina, Appl. Phys. Lett. 15 92 (1984).Google Scholar
4.LA. Kolodziejski, RIL. Gunshor, Bonsett, T.C., Venkatasubramanian, R., Datta, S., RB. ByLsma, Becker, W.M., and Otsuka, N., Appl. Phys. Lett., IL 169 (1985).Google Scholar
5. Datta, S., Furdyna, J. K., RIL. Gunshor, Superlatt. Microstr.,. L 327 (1985).Google Scholar
6. Yoder-Short, D., Furdyna, J.K., Debska, U., J. Appl. Phys., in press.Google Scholar
7. Bylsma, R.B., W.M. Becker, Kossut, J., Yoder-Short, D., Debska, U., to be published.Google Scholar
8.LA. Kolodziejski, Gunshor, R.L., Bonsett, T.C., Frohne, R., Datta, S., Otsuka, N., Bylsma, R.B., Becker, W.M., and Nurmikko, A.V., J. Vac. Sci. Technol., March-April, (1986).Google Scholar
9.LA. Kolodziejski, MK. Udo, Bonsett, T.C., Gunshor, R.L., Datta, S., Bylsma, R.B., Becker, W.M., and Otsuka, N., Bull. Amer. Phys. Soc. 31) 209 (1985).Google Scholar
10. Hefetz, Y., Nakahara, J., Nurmikko, A.V., LA. Kolodziejski, RIL. Gunshor, and Datta, S., Appl. Phys. Lett., 4L 989 (1985).Google Scholar
11See Landolt-Bornstein Tables, New Series Group II, vol. 17b, ed. Madelung, O., Schulz, M., and Weiss, H., Springer Verlag, 1983, p 142.Google Scholar
12. Bylsma, R.B., WAI. Becker, Bonsett, T.C., LA. Kolodziejski, Gunshor, R.L., Yamanishi, M., and Datta, S., Appl. Phys. Lett., AZ 1039 (1985).Google Scholar
13. Blacha, A., Presting, H., Cardona, M., Phys. Stat. Sol. (b), 1= 11 (1984).CrossRefGoogle Scholar