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A Quantitative Model of Surface Segregation in III-V Ternary Compounds

Published online by Cambridge University Press:  10 February 2011

Sergey Yu. Karpov  and
Yuri N. Makarov
Sergey Yu. Karpov
Affiliation:
Soft Impact Ltd, P.O. Box 29, 194156 St.Petersburg, Russia
Yuri N. Makarov
Affiliation:
Fluid Mechanics Institute, University of Erlangen-Nüimberg, 4 Cauerstraße, 91058 Erlangen, Germany
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Abstract

A quantitative model of surface segregation free from adjustable parameters is suggested for the growth of ternary III-V compounds. In contrast to previous approaches, the model considers the dynamics of surface population by the three elements producing the ternary alloy. The underlying assumption is that the atoms in the adsorption layer are in equilibrium with the crystal bulk. Elastic strain arising in the epitaxial layer due to the lattice constant mismatch with the substrate is found to be one of the key factors affecting segregation. Along with growth temperature, it controls the segregation efficiency and the composition profile evolution in a growing heterostructure. The effect of the V/III ratio, growth rate and other parameters is accounted for. Here, we apply the model to analyze the InGaAs growth by molecular beam epitaxy owing to the vast experimental data available for the model verification. The theoretical predictions show a good agreement with the experimental observations

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 185
Copyright
Copyright © Materials Research Society 2000

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References

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