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Quantitative Kelvin Probe Force Microscopy

Published online by Cambridge University Press:  31 January 2011

Christine Baumgart ,
Manfred Helm  and
Heidemarie Schmidt
Christine Baumgart
Affiliation:
[email protected], Forschungszentrum Dresden-Rossendorf, Institute of Ion-Beam Physics and Materials Research, Nanofunctional Films, Dresden, Germany
Manfred Helm
Affiliation:
[email protected], Forschungszentrum Dresden-Rossendorf, Institute of Ion-Beam Physics and Materials Research, Dresden, Saxony, Germany
Heidemarie Schmidt
Affiliation:
[email protected], Forschungszentrum Dresden-Rossendorf, Institute of Ion-Beam Physics and Materials Research, Nanofunctional Films, Dresden, Saxony, Germany
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Abstract

In this paper we report on the investigation of electrostatic forces between a conductive probe and semiconducting materials by means of Kelvin probe force microscopy measurements. Due to the formation of an asymmetric electric dipole at the semiconductor surface, the measured KPFM bias is related with the energy difference between Fermi energy and respective band edge. Quantitative Kelvin probe force microscopy measurements on semiconductors, namely on a conventional dynamic random-access memory cell and on a cross-sectionally prepared Si epilayer structure, are presented.

Keywords

semiconductingelectrical propertiesscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1232: Symposium OO – Dynamic Scanning Probes — Imaging, Characterization, and Manipulation , 2009 , 1232-OO07-02
Copyright
Copyright © Materials Research Society 2010

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