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Quantitative In-Situ Measurement of Asperity Compression Under the Wafer During Polishing

Published online by Cambridge University Press:  01 February 2011

Caprice Gray ,
Daniel Apone ,
Chris Rogers ,
Vincent P. Manno ,
Chris Barns ,
Mansour Moinpour ,
Sriram Anjur  and
Ara Philipossian
Caprice Gray
Affiliation:
Tufts University, Department of Mechanical Engineering, Medford, MA,USA
Daniel Apone
Affiliation:
Tufts University, Department of Mechanical Engineering, Medford, MA,USA
Chris Rogers
Affiliation:
Tufts University, Department of Mechanical Engineering, Medford, MA,USA
Vincent P. Manno
Affiliation:
Tufts University, Department of Mechanical Engineering, Medford, MA,USA
Chris Barns
Affiliation:
Intel Corporation, Santa Clara, CA, USA
Mansour Moinpour
Affiliation:
Intel Corporation, Santa Clara, CA, USA
Sriram Anjur
Affiliation:
Cabot Microelectronics Corporation, Aurora, IL,USA
Ara Philipossian
Affiliation:
University of Arizona, Department of Chemical Engineering, Tucson, AZ, USA
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Abstract

The interaction of the wafer, slurry and pad determines the material removal rate during Chemical Mechanical Planarization (CMP). Dual emission laser induced fluorescence (DELIF) provides a means to measure the slurry layer thickness between the wafer and a Fruedenbergy FX9 pad during CMP with high spatial (4.3 μm/pixel) and temporal resolution (2 Hz). In this paper we present some preliminary measurements of pad compression using DELIF to measure the standard deviation of asperity height. Static slurry layer images were captured at high (70 kPa) and low (0 kPa) down-force applied to the wafer. In-situ, dynamic images at 10 kPa downforce applied to etched wafers were imaged. Two wafers were etched such that they contain square wells, one wafer with 27 μm and the other will 14.5 μm deep wells. In the static case, asperity compression is directly related the amount of fluid displaced. In the dynamic case, asperity compression is 35% greater under the 27 μm wells than the 14.5 μm wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W5.4
Copyright
Copyright © Materials Research Society 2005

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