Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T17:48:47.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantitative Hrtem: Measuring Projected Potential, Surface Roughness and Chemical Composition

Published online by Cambridge University Press:  21 February 2011

P. Schwander ,
C. Kisielowski ,
F.H. Baumann ,
Y.O. Kim  and
A. Ourmazd
P. Schwander
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey 07733, USA
C. Kisielowski
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey 07733, USA
F.H. Baumann
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey 07733, USA
Y.O. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey 07733, USA
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, New Jersey 07733, USA
Get access

Abstract

We describe how general lattice images may be used to measure the variation of the potential in crystalline solids in any projection, with no knowledge of the imaging conditions. This approach is applicable to structurally perfect samples, in which interfacial topography, or changes in composition are of interest. We present the first atomic-level topographic map of a Si/SiO2 interface in plan-view, and the first microscopic compositional map of a Si/GeSi/Si quantum well in cross-section.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 373
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spence, J.H.C., Experimental High Resolution Electron Microscopy (Clarendon Press, Oxford, 1981).Google Scholar
2. Downing, K.H., Meisheng, H., Wenk, H.-R. and O'Keefe, M.A., Nature 348,525 (1990).CrossRefGoogle Scholar
3. Bourret, A., Rouvière, J.-L. and Penisson, J.M., Acta Cryst. A 44, 838 (1988).CrossRefGoogle Scholar
4. O'Keefe, M.A., Dahmen, U. and Hetherington, C.J.D., Mat. Res. Soc. Symp. 159,453 (1990).CrossRefGoogle Scholar
5. Schwander, P., Kisielowski, C., Seibt, M., Baumann, F.H., Kim, Y.O. and Ourmazd, A., Phys. Rev. Lett., accepted (1993).Google Scholar
6. Ourmazd, A., Taylor, D.W., Cunningham, J. and Tu, C.W., Phys. Rev. Lett. 62,933 (1989).CrossRefGoogle Scholar
7. Ourmazd, A., Materials Science Reports 9, 201 (1993).Google Scholar
8. Ourmazd, A., Taylor, D.W., Bode, M. and Kim, Y.O., Science 246, 1571 (1989).Google Scholar
9. Marks, L.D., Ultramicroscopy 18, 33 (1985).Google Scholar