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Quantitative Distribution Analysis of Phosphorus with Sims in the Layer System SiO2/Si

Published online by Cambridge University Press:  25 February 2011

G. Stingeder ,
U. Traxlmayr ,
E. Guerrero ,
M. Grasserbauer  and
H. Pötzl
G. Stingeder
Affiliation:
Inst.for Analyt.Chemistry, TU Vienna, Getreidemarkt 9, A-1060 Wien,Austria
U. Traxlmayr
Affiliation:
Inst.for General Electrical Engineering and Electronics, Vienna
E. Guerrero
Affiliation:
Inst.for General Electrical Engineering and Electronics, Vienna
M. Grasserbauer
Affiliation:
Inst.for Analyt.Chemistry, TU Vienna, Getreidemarkt 9, A-1060 Wien,Austria
H. Pötzl
Affiliation:
Inst.for General Electrical Engineering and Electronics, Vienna Ludwig Boltzmann-Institute for Solide State Physics, Vienna
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Abstract

The measurement technique for quantitative distribution analysis of P in the layer system SiO2/Si was optimized. Oxygen primary ions and an increased oxygen pressure ( 5.10E-5mbar) in the sample chamber were used for elimination of the matrix effect.A computer routine for precise adjustment of the mass spectrometer during depth profiling with high mass resolution was developed. Charging effects were compensated by flooding the sample with electrons, optimized biasing of the accelerating potential of the secondary ions and normalization to a reference signal. The improved measurement technique was used for determination of segregation coefficients which are used as input parameters for process modeling in MOS transistor production.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 329
Copyright
Copyright © Materials Research Society 1986

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References

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