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Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

Published online by Cambridge University Press:  22 February 2011

Lawrence E. Lapides ,
George L. Whiteman  and
Robert G. Wilson
Lawrence E. Lapides
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
George L. Whiteman
Affiliation:
Santa Barbara Research Center, 75 Coromar Drive, Goleta, CA 93117
Robert G. Wilson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

Quantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 657
Copyright
Copyright © Materials Research Society 1984

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References

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