Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-18T12:19:38.982Z Has data issue: false hasContentIssue false
  • English
  • Français

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

Published online by Cambridge University Press:  01 February 2011

Charles W Teplin ,
Ina T. Martin ,
Kim M. Jones ,
David Young ,
Manuel J. Romero ,
Robert C. Reedy ,
Howard M. Branz  and
Paul Stradins
Charles W Teplin
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Ina T. Martin
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
David Young
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Manuel J. Romero
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Robert C. Reedy
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Howard M. Branz
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Paul Stradins
Affiliation:
[email protected], National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., Golden, CO, 80401, United States
Get access

Abstract

Fast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

Keywords

Siepitaxyenergy generation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A11-06
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Aberle, A. G. Thin Solid Films 511 (2006) 26.Google Scholar
2. Wang, Q. Teplin, C. W. Stradins, P. To, B. Jones, K. M. and Branz, H. M. Journal of Applied Physics 100 (2006) 5.Google Scholar
3. Teplin, C. W. Branz, H. M. Jones, K. M. Romero, M. J. Stradins, P. and Gall, S. Mat. Res. Soc. Symp. Proc. 989 (2007) 133.Google Scholar
4. Teplin, C. W. Iwaniczko, E. To, B. Moutinho, H. Stradins, P. and Branz, H. M. Physical Review B 74 (2006) 5.Google Scholar
5.U. of Delaware – IGERT, http://www.udel.edu/igert/pvcdrom/APPEND/SILICON.HTM.Google Scholar
6. Lin, D. and R., C., Physical Review B 60 (1999) R8461.Google Scholar
7. Zheng, W. and Gallagher, A. Thin Solid Films 516 (2008) 929.Google Scholar