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Pzt Thin Films on a Lead Titanate Interlayer Prepared by rf Magnetron Sputering

Published online by Cambridge University Press:  21 February 2011

P. H. Ansari  and
A. Safari
P. H. Ansari
Affiliation:
Department of Ceramic Engineering, Rutgers University, Piscataway NJ 08855
A. Safari
Affiliation:
Department of Ceramic Engineering, Rutgers University, Piscataway NJ 08855
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Abstract

Ferroelectric lead zirconate titanate (PZT) films with a composition near the morphotropic phase boundary have been deposited by if magnetron sputtering on a Si substrate coated with silicon oxide, titanium, and platinum (Si/SiO2/Ti/Pt). Substrate temperature and oxygen partial pressure were changed during deposition to prepare films with controlled stoichiometry and perovskite structure. The effects of lead titanate (PT) as a buffer layer were investigated. Thin films of PT/PZT have a dielectric constant of 800 with a dissipation factor of 0.04 at 1 kHz. The remnant polarization of 8μC/cm2 and the coercive field of 50 kV/cm were measured. The effect of processing on the formation of perovskite phase and the electrical properties will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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References

1. Araujo, Carlos A. Paz de, McMillan, Larry D., Melnick, Bradley M., Cuchiaro, Joseph D., and Scott, James F., Ferroelectrics 104, 241 (1990).CrossRefGoogle Scholar
2. Schwee, Leonard J., Ferroelectrics 116, 157 (1991).Google Scholar
3. Maderic, B. P., Sanchez, L.E., and Wu, S. Y., Ferroelectrics 116, 65 (1991).Google Scholar
4. Krupanidhi, S. B., Maffei, N., Sayer, M., and EI-Assal, K., J. Appl. Phys. 54 (11), 6601 (1983).Google Scholar
5. Hase, Takashi, and Shiosaki, Tadashi, Japanese J. Appl. Phys. 30 (9B), 2159 (1991).Google Scholar
6. Takayama, Ryoichi, and Tomita, Yoshihiro, J. Appl. Phys. 65 (4), 1666 (1989).CrossRefGoogle Scholar
7. Melnick, B. M., Cuchiaro, J. D., McMillan, L. D., Araujo, C. A. Paz de, and Scott, J. F., Ferroelectrics 112, 329 (1990).Google Scholar
8. Sanchez, L. E., Dion, D. T., Wu, S. Y., and Naik, I. K., Ferroelectrics 116, 1 (1991).Google Scholar
9. Ramesh, R., Inam, A., Chan, W. K., Tillerot, F., Wilkens, B., Chang, C. C., Sands, T., Tarascon, J. M., and Keramidas, V. G., Appl. Phys. Lett. 59 (27), 3542 (1991).Google Scholar
10. Grabowski, K. S., Horwitz, J. S., and Chrisey, D. B., Ferroelectrics 116, 19 (1991).Google Scholar
11. See for example, Roy, R. A., Etzold, K. F., and Cuomo, J. J., Mat. Res. Soc. Syrnp. Proc. 200, 141 (1990).Google Scholar
12. Swartz, S. L., Bright, S. J., Melling, P. J., and Shrout, T. R., Ferroelectrics 108, 71 (1990).Google Scholar