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PVD Growth of FCC Metal Films On Single Crystal Si And Ge Substrates

Published online by Cambridge University Press:  10 February 2011

K. H. Westmacott ,
S. Hinderberger ,
T. Radetic  and
U. Dahmen
K. H. Westmacott
Affiliation:
National Center for Electron Microscopy Lawrence Berkeley National Laboratory 1 Cyclotron Road Berkeley, California 94720, USA
S. Hinderberger
Affiliation:
National Center for Electron Microscopy Lawrence Berkeley National Laboratory 1 Cyclotron Road Berkeley, California 94720, USA
T. Radetic
Affiliation:
National Center for Electron Microscopy Lawrence Berkeley National Laboratory 1 Cyclotron Road Berkeley, California 94720, USA
U. Dahmen
Affiliation:
National Center for Electron Microscopy Lawrence Berkeley National Laboratory 1 Cyclotron Road Berkeley, California 94720, USA
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Abstract

Epitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999 , 93
Copyright
Copyright © Materials Research Society 1999

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References

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