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PV Metamaterial Based on the Nanostructured Si

Published online by Cambridge University Press:  31 January 2011

Zbigniew T. Kuznicki  and
Patrick Meyrueis
Zbigniew T. Kuznicki
Affiliation:
[email protected], Photonics System Laboratory, Boulevard Sébastien Brant, Illkirch, 67400, France, +33 3 90 24 46 07, +33 3 90 24 46 19
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Abstract

There are several ways to nanostructure Si. Some of them, e.g. nanoscale Si-layerd systems buried within the n+ layer of a crystalline Si can provide an initial material with unpredicted optoelectronic behavior. Such a transformation leads to a PV Si metamaterial, whose optoelectronic properties arise from qualitatively new response functions that are (i) not observed in the constituent materials and (ii) result from the inclusion of artificially fabricated, intrinsic and extrinsic, low-dimensional components. We show that an extremely strong c-Si:P absorptance, is larger than can result from conventional conversion because the surface population increases by injection of additional carriers from a nanostratum (transformed up to a Si-metamaterial) lying just behind the top c-Si:P-layer.

Keywords

photovoltaicnanostructureabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q07-11
Copyright
Copyright © Materials Research Society 2010

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