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Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices

Published online by Cambridge University Press:  03 September 2012

R. D. Vispute ,
A. Patel ,
K. Baynes ,
B. Ming ,
R. P. Sharma ,
T. Venkatesan ,
C. J. Scozzie ,
A. Lelis ,
T. Zheleva  and
K. A. Jones
R. D. Vispute
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
A. Patel
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
K. Baynes
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
B. Ming
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
R. P. Sharma
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, MD 20742
C. J. Scozzie
Affiliation:
United States Army Research Laboratory, Adelphi, MD 20783
A. Lelis
Affiliation:
United States Army Research Laboratory, Adelphi, MD 20783
T. Zheleva
Affiliation:
United States Army Research Laboratory, Adelphi, MD 20783
K. A. Jones
Affiliation:
United States Army Research Laboratory, Adelphi, MD 20783
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Abstract

We report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 °C (room temperature) to 1000 °C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering specttroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 °C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were ∼2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a results of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 * 10-4 cm2 were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 °C. We have measured leakage current densities of low 10-8 A/cm2 at room temperature, and have mid 10-3 A/cm2 at 450°C under a field of 2 MV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.3
Copyright
Copyright © Materials Research Society 1999

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