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Pulsed-Laser Deposition of Titanium Nitride

Published online by Cambridge University Press:  21 February 2011

Wenbiao Jiang ,
M. Grant Norton ,
J. Thomas Dickinson  and
N.D. EVANS
Wenbiao Jiang
Affiliation:
Department of Mechanical and Materials Engineering and
M. Grant Norton
Affiliation:
Department of Mechanical and Materials Engineering and
J. Thomas Dickinson
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164
N.D. EVANS
Affiliation:
Oak Ridge institute for Science and Education, Oak Ridge, TN 37831
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Abstract

The pulsed-laser deposition technique has been used to form thin films of TiN on (100)-oriented single crystal substrates of silicon and rocksalt. Using atomic force microscopy, it was revealed that TiN films grown on silicon at substrate temperatures ranging from 50°C to 500°C were extremely smooth—the mean roughness being ~ 0.2 nm. Thin TiN films deposited on freshly cleaved NaCl were found to be epitaxial at substrate temperatures as low as 50°C. Epitaxy in this latter system is believed to be due to the structural similarity between film and substrate and the almost exact 4:3 coincident site lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 103
Copyright
Copyright © Materials Research Society 1995

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References

1 J.Kools, C.S., Nillesen, C.J.C.M., Brongersma, S.H., van, E. de Riet, and Dieleman, J., J. Vac. Sci. Technol. A 10, 1809 (1992)Google Scholar
2 Altshulin, S., Rosen, A., and Zahavi, J., J. Mater. Sci. 28, 3749 (1993)Google Scholar
3 Auciello, O., T. Barnes, Chevacharoenkul, S., Schreiner, A.F., and McGuire, G.F., Thin Solid Films 181,73 (1989)Google Scholar
4 Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhury, R., and Zheleva, T., Appl. Phys. Lett. 61, 1290 (1992)Google Scholar
5 Toth, L.E., Transition Metal Carbides and Nitrides, Academic Press, New York (1971)Google Scholar
6 Oh, U.C., Je, J.H., and Lee, J.Y., J. Mater. Res. 10, 634 (1995)Google Scholar
7 Lewis, B. and Stirland, D.J., J. Cryst. Growth 3,4, 200 (1968)Google Scholar