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Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment

Published online by Cambridge University Press:  15 February 2011

R. F. Wood ,
Douglas H. Lowndes  and
W. H. Christie
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
W. H. Christie
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
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Abstract

It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 231
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Laser-Solid Interactions and Laser Processing-1978, AIP Conf. Proc. No. 50, ed. by Ferris, S. D., Leamy, H. J., and Poate, J. M., (Amer. Inst. of Physics, New York, 1979).Google Scholar
2. Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., (Academic Press, New York, 1980).Google Scholar
3. Wang, J. C., Wood, R. F., and Pronko, P. P., Appl. Phys. Lett. 33, 455 (1978).CrossRefGoogle Scholar
4. Baeri, P., Campisano, S. U., Foti, G., and Rimini, E., J. Appl. Phys. 50, 788 (1979).CrossRefGoogle Scholar
5. Schultz, J. C. and Collins, R. J., Appl. Phys. Lett. 34, 845 (1979).CrossRefGoogle Scholar
6. Surko, C. M., Simons, A. L., Auston, D. H., Golovchenko, J. A., Slusher, R. E., and Venkatesan, T.N.C., Appl. Phys. Lett. 34, 635 (1979).CrossRefGoogle Scholar
7. See, for example, Van Vechten, J. A., 11th Int. Conf. on Defects and Radiation Effects in Semiconductors, Sept. 1980 (Kyoto, Japan).Google Scholar
8. Elir, A., Smirl, A. L., Leung, C. Y., and Scully, M. O., Sol. St. Electr. 21, 151 (1978);Google Scholar
8a Auston, D. H., McAfee, S., Shank, C. V., Ippen, E. P., and Teschke, O., Sol. St. Electr. 21, 147 (1978).CrossRefGoogle Scholar
9. Auston, D. H., Golovchenko, J. A., Simons, A. L., Slusher, R. E., Smith, P. R., Surko, C. M., and Venkatesan, T.N.C., Ref. 1, and refs. therein.Google Scholar
10. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).CrossRefGoogle Scholar
11. Murakami, K., Sato, Y., Gamo, K. and Namba, S., 11th Int. Conf. on Defects and Radiation Effects in Semiconductors Sept., 1980 (Kyoto, Japan).Google Scholar
12. Kular, S. S., Sealy, B. J., Badawi, M. H., Stephens, K. G., Sadana, D., and Booker, G. R., Elec. Letts. 14–15, 413 (1979).CrossRefGoogle Scholar
13. Fletcher, J., private communication.Google Scholar
14. Wood, R. F. and Giles, G. E., to be published in Phys. Rev. B.Google Scholar
15. Wood, R. F., Kirkpatrick, J. R., and Giles, G. E., submitted to Phys. Rev. B.Google Scholar
16. Amos, J. W. and Elfe, T. B., IEEE Trans. Electron Devices ED-25, 1160 (1978).CrossRefGoogle Scholar