Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-19T04:27:18.514Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed UV Excimer Laser Doping of Semiconductors*

Published online by Cambridge University Press:  15 February 2011

T. F. Deutsch
T. F. Deutsch*
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Get access

Abstract

UV excimer lasers have been used to dope semiconductors by a one–step process in which the laser serves both to release dopant atoms from a parent molecule and to melt the surface, allowing incorporation of dopant atoms by liquid state diffusion. The technique has been used to dope Si, GaAs, and InP. Shallow junctions formed by the technique have been fabricated into efficient Si and GaAs solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 225
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work was sponsored by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

References

REFERENCES

1. Young, R. T., Wood, R. F., Narayan, J., White, C. W., and Christie, W. H., IEEE Trans. Electron Devices ED- 27, 807 (1980).Google Scholar
2. Narayan, J., Young, R. T., Wood, R. F., and Christie, W. H., Appl. Phys. Lett. 33, 338 (1978).Google Scholar
3. Muller, J. C., Fogarassy, E., Salles, D., Stuck, R., and Siffert, P. M., IEEE Trans. Electron Devices EDL- 27, 815 (1980).CrossRefGoogle Scholar
4. Forgassy, E., Stuck, R., Grob, J. J., and Siffert, P., J. Appl. Phys. 52, 1076 (1981);Google Scholar
5. Affolter, K., Luthy, W., and von Allmen, M., Appl. Phys. Lett. 33, 185 (1978).CrossRefGoogle Scholar
6. Wu, S., Solid State Technol. 25, 71 (June, 1982).Google Scholar
7. Young, R. T., Narayan, J., and Wood, R. F., Appl. Phys. Lett. 35, 447 (1979).CrossRefGoogle Scholar
8. Ehrlich, D. J., Deutsch, T. F., Osgood, R. M. Jr., and Silversmith, D. J., Proceedings Fourteenth Conference on Solid State Devices, (Jpn. J. Appl. Phys., Tokyo, 1982), p. 335.Google Scholar
9. Deutsch, T. F., Fan, J. C. C., Turner, G. W., Chapman, R. L., Ehrlich, D. J., and Osgood, R. M. Jr., Appl. Phys. Lett. 38, 144 (1981).Google Scholar
10. Fan, J. C. C., Deutsch, T. F., Turner, G. W., Ehrlich, D. J., Chapman, R. L., and Osgood, R. M. Jr., Proceedings of Fifteenth IEEE Photovoltaics Specialists Conference, (Institute of Electrical and Electronics Engineers, New York, 1981), p. 432.Google Scholar
11. Deutsch, T. F., Ehrlich, D. J., Rathman, D. D., Silversmith, D. J., and Osgood, R. M. Jr., Appl. Phys. Lett. 39, 825 (1981).Google Scholar
12. Deutsch, T. F., Ehrlich, D. J., Osgood, R. M. Jr., and Liau, Z. L., Appl. Phys. Lett. 36, 847 (1980).Google Scholar
13. Ehrlich, D. J. and Osgood, R. M. Jr., Chem. Phys. Lett. 79, 381 (1981).CrossRefGoogle Scholar
14. Turner, G. B., Tarrant, D., Pollack, G., Pressley, R., and Press, R., Appl. Phys. Lett. 39, 967 (1981).Google Scholar
15. Anderson, C. L., Dunlap, H. L., Hess, L. D., Olson, G. L., and Vaidyanathan, K. V. in Laser and Electron Beam Processing of Materials, edited by White, C. W. and Peercy, P. S. (Academic Press, New York, 1980), p. 334.Google Scholar
16. Fan, J. C. C., Chapman, R. L., Donnelly, J. P., Turner, G. W., and Bozler, C. O. in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J. F., Hess, L. D., and Sigmon, T. W. (North-Holland, New York, 1981), p. 261.Google Scholar
17. Fan, J. C. C., Chapman, R. L., Donnelly, J. P., Turner, G. W., and Bozler, C. O., Appl. Phys. Lett. 34, 780 (1979).Google Scholar
18. Young, R. T., Narayan, J., Westbrook, R. D., and Wood, R. F. in Laser Solid Interactions and Laser Processing–1978, edited by Ferris, II, S. D., Leamy, J., and Poate, J. M., AlP Conf. Proc. 50, (American Institute of Physics, New York, 1979), p. 579.Google Scholar
19. Deutsch, T. F., Fan, J. C. C., Ehrlich, D. J., Turner, G. W., Chapman, R. L., and Gale, R. P., Appl. Phys. Lett. 40, 722 (1982).Google Scholar
20. Fan, J. C. C., Bozler, C. O., and Palm, B. J., Appl. Phys. Lett. 35, 875 (1979).CrossRefGoogle Scholar
21. Chapman, R. L., Fan, J. C. C., Donnelly, J. P., and Tsaur, B. Y., Appl. Phys. Lett. 40, 805 (1982).CrossRefGoogle Scholar